Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process
نویسندگان
چکیده
A stacked double-layer (SDL) thermopile-based infrared sensor, which comprised of 96 thermocouples on a suspended membrane, has been designed and fabricated with a CMOS-compatible process. The thermoelectric properties were characterized, and responsivity (Rs) of 202.8 V W−1 and detectivity (D∗) of 2.85∗108 cm Hz1/2 W−1 for a SDL thermopile were derived. (Some figures may appear in colour only in the online journal)
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تاریخ انتشار 2013